MRF6V3090NR1 MRF6V3090NR5
MRF6V3090NBR1 MRF6V3090NBR5
5
RF Device Data
Freescale Semiconductor, Inc.
TYPICAL CHARACTERISTICS
ηD
Gps
VDD
=50Vdc,IDQ
= 350 mA, f = 860 MHz
50
10
1000
02010
30
40
VDS, DRAIN--SOURCE VOLTAGE (VOLTS)
Figure 4. Capacitance versus Drain--Source Voltage
C, CAPACITANCE (pF)
Ciss
100
Coss
Measured with
±30 mV(rms)ac @ 1 MHz, VGS
=0Vdc
24
1
0
70
100
23
21
19
60
50
40
30
Pout, OUTPUT POWER (WATTS)
Figure 5. CW Power Gain and Drain Efficiency
versus Output Power (Narrowband Test Circuit)
G
ps
, POWER GAIN (dB)
η
D,
DRAIN EFFICIENCY (%)
22
20
17
200
20
47
56
-- 6
54
Pin, INPUT POWER (dBm)
Figure 6. CW Output Power versus Input Power
(Narrowband Test Circuit)
53
4
52
-- 5 -- 3 -- 1 1 3-- 2 0 2
P
out
, OUTPUT POWER (dBm)
P3dB = 51.28 dBm (134.3 W)
Actual
Ideal
16
25
10
20 40 60 80 100 120 140
23
21
Pout, OUTPUT POWER (WATTS)
Figure 7. CW Power Gain versus Output Power
(Narrowband Test Circuit)
G
ps
, POWER GAIN (dB)
30
20
130 150
Figure 8. CW Power Gain and Drain Efficiency versus
Output Power (Narrowband Test Circuit)
Pout, OUTPUT POWER (WATTS)
G
ps
, POWER GAIN (dB)
18
25
1
22
24
23
100 200
VDD
=50Vdc,IDQ
= 350 mA, f = 860 MHz
IDQ
= 350 mA, f = 860 MHz
50
49
-- 4
18
50 70 90 110
VDD
=40V
50 V
25_C
TC
=--30_C
85_C
Gps
19
21
20
VDD
=50Vdc,IDQ
= 350 mA, f = 860 MHz
0
70
10
η
D,
DRAIN EFFICIENCY (%)
18
10
Crss
10
P2dB = 51.06 dBm (127.6 W)
P1dB = 50.7 dBm (117.5 W)
55
51
48
17
19
22
24
45 V
ηD
TC
=--30_C
85_C
5025_C
10
20
30
40
60
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